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  • Key words: Prostaglandin E2— Prostaglandin E receptor — MC3T3-E1 cells — Osteoblast — Prostaglandin G/H synthase-2.  (1)
  • electron energy loss spectroscopy (EELS)  (1)
  • 1995-1999  (2)
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Verlag/Herausgeber
Erscheinungszeitraum
  • 1995-1999  (2)
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  • 1
    ISSN: 1432-0827
    Schlagwort(e): Key words: Prostaglandin E2— Prostaglandin E receptor — MC3T3-E1 cells — Osteoblast — Prostaglandin G/H synthase-2.
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin , Physik
    Notizen: Abstract. Prostaglandin E2 (PGE2) is known to autoamplify its production in the osteoblasts through the induction of prostaglandin G/H synthase-2 (PGHS-2), which is the inducible form of the rate-limiting enzyme in PG synthesis, PGHS. To elucidate the cellular mechanism mediating this process, we have employed the PGE2 analogs, which are specific agonists for four subtypes of PGE receptor, and studied the potency of these analogs to induce PGHS-2 mRNA in mouse osteoblastic MC3T3-E1 cells. The induction was mainly observed by 17-phenyl-ω-trinor PGE2 (EP1 agonist) and sulprostone (EP3/EP1 agonist), but not by butaprost (EP2 agonist) or 11-deoxy PGE1 (EP4/EP2 agonist). Since EP3 subtype was undetectable in MC3T3-E1 cells, these data indicate that PGHS-2 mRNA induction is mediated through EP1 subtype of PGE receptor in MC3T3-E1 cells. PGE2 production determined by radioimmunoassay was also increased by 17-phenyl-ω-trinor PGE2 and sulprostone. The autoamplification of PGE2 production is considered to be important in elongating the otherwise short-lived PGE2 action in certain physiological conditions such as mechanical stress and fracture healing, as well as the pathological inflammatory bone loss. The observations in the present study provide us with the better understanding of these processes.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Interface science 5 (1997), S. 5-16 
    ISSN: 1573-2746
    Schlagwort(e): hetero interface ; high resolution electron microscopy (HREM) ; electron energy loss spectroscopy (EELS) ; electron energy loss near edge structure (ELNES) ; molecular orbital (MO) calculation ; chemical bonding
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Abstract Thin films of vanadium were deposited on the (001) surface of a MgOsubstrate by molecular beam epitaxy (MBE) and the V/MgO interface wasinvestigated by cross-sectional high resolution electron microscopy(HREM) and electron energy loss spectroscopy (EELS). In order todetermine the location of atoms at the interface, computersimulations were performed for four possible models, and bestmatching between the experimental and simulated images was obtainedfor the model where the V atoms are located directly on top of the Mgatoms at the interface. Interface bonding mechanism was investigatedby a first principles molecular-orbital (MO) calculation using thediscrete-variational (DV)-Xα method for a modelcluster of the interface, i.e., (Mg9O9V5).The V-3d band was located in between the band-gap of MgO, and nearly empty Mg-3sp orbitals werefound to overlap with the V-3d band. The Mg-3sp and V-3d hybridizedin a bonding manner, thereby generates strong covalent bondingbetween V and Mg. Nearly filled O-2p orbitals were also found tohybridize with the V-3d orbitals in an antibonding manner. The bondoverlap population of the V–O bond was approximately four timessmaller than that of the V–Mg bond when the bond-length was thesame. The near edge structure of EELS specific to the interface wasobtained using a V/MgO multilayer specimen at both Mg-K and O-Kedges. Comparison between the experimental and theoretical spectra bythe present MO calculation clearly found the presence of hybridizedorbitals of V-3d with Mg-3p.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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