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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (2)
  • Inbreeding  (1)
  • 1
    Digitale Medien
    Digitale Medien
    Half-sib mating structures (1993)
    Springer
    Journal of mathematical biology 31 (1993), S. 241-252 
    Details
    ISSN: 1432-1416
    Schlagwort(e): Inbreeding ; Difference equations
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Mathematik
    Notizen: Abstract All ways in which all matings in a population can be between half-sibs under a generalization of regular systems of inbreeding are characterized for both finite and infinite populations. A model of random half-sib mating is developed and analyzed, and the asymptotic configuration of populations subject to it is described. The classical model of half-sib mating which ensues from the standard definition of regular systems of inbreeding is only one of many ways a population can propagate by half-sib mating, and a wide range of genetic identity is possible dependent on which half-sib mating structure governs a population.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00166144
    Standort Signatur Erwartet Verfügbarkeit
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    Artikel (Nationallizenzen)
    Volltext
  • 2
    facet.materialart.
    Unbekannt
    Investigation of contact metallization systems for solar cells (1980)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-18
    Beschreibung: In conventional solar cells, evaporated Ti-Pd-Ag metallization system has been found reliable. However, for low cost terrestrial applications, its cost effectiveness may be questioned. Electroplated Ag and Cu have been investigated as replacements for evaporated Ag and have given results comparable to the evaporated Ti-Pd-Ag system.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: Electrochemical Society; vol. 127
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unbekannt
    Whatever happened to silicon carbide (1981)
    In:  CASI
    Details
    Publikationsdatum: 2017-10-02
    Beschreibung: The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 71-76
    Format: application/pdf
    Standort Signatur Erwartet Verfügbarkeit
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    NASA TECHNICAL REPORTS
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