ISSN:
1057-9257
Schlagwort(e):
photoreflectance
;
photoluminescence
;
InGaAs/GaAs quantum well
;
type I and II excitonic transition
;
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy- and light-hole excitonic transitions in the quantum wells have been observed. The transition energies obtained have been compared with values derived from theoretical considerations using the envelope function model including lattice-mismatch-related stress. The heavy- and light-hole transitions have been identified as excitonic transitions of types I and II respectively. © 1997 John Wiley & Sons, Ltd.
Zusätzliches Material:
3 Ill.
Materialart:
Digitale Medien
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