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Randomized online algorithms for maximizing busy time interval scheduling (1996)

Faigle, U. ; Garbe, R. ; Kern, W.

Springer

Computing 56 (1996), S. 95-104

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ISSN: 1436-5057

Keywords: 68M20 ; Probabilistic algorithm ; online scheduling ; interval ; busy time

Source: Springer Online Journal Archives 1860-2000

Topics: Computer Science

Description / Table of Contents: Zusammenfassung Wir betrachten das Problem der Zuteilung von Aufgaben bestimmter Rechenzeit auf einem Rechner, um so seine Auslastung zu maximieren. Die Aufgabe besteht darin, einen probabilistischen Online-Algorithmus mit vernünftigem worst-case Performance-Verhältnis zu finden. Wir geben die Antwort auf ein offenes Problem von Lipton und Tompkins, das das bestmögliche Verhältnis betrifft. Weiter verallgemeinern wir ihre Ergebnisse auf einm-Maschinen-Analogon. Schließlich wird eine Variante des Problems analysiert, in dem der Rechner mit einem Zwischenspeicher für einen Job versehen ist.

Notes: Abstract We consider the problem of scheduling tasks requiring certain processing times on one machine so that the busy time of the machine is maximized. The problem is to find a probabilistic online algorithm with reasonable worst case performance ratio. We answer an open problem of Lipton and Tompkins concerning the best possible ratio that can be achieved. Furthermore, we extend their results to anm-machine analogue. Finally, a variant of the problem is analyzed, in which the machine is provided with a buffer to store one job.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF02309339

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Low-Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursor (1992)

Treichel, H. ; Mitwalsky, A. ; Sandler, N. P. ; [et al.]

New York, NY [u.a.] : Wiley-Blackwell

Advanced Materials for Optics and Electronics 1 (1992), S. 299-308

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ISSN: 1057-9257

Keywords: LPCVD ; Tantalum pentoxide ; High dielectric constant ; ULSI devices ; Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: A laminar flow low-pressure chemical vapour deposition (LPCVD) system (LAM IntegrityTM) has been used to deposit tantalum pentoxide (Ta2O5) from Ta(OEt)5 films in the presence of oxygen (O2) at 470 °C at a typical deposition rate of 4 nm min-1. Uniformities of 〈1.5% (SD 1σ) over a 150 mm silicon substrate were obtained. The layers were annealed under different conditions. It was discovered that the films did not change their stoichiometry as determined by Rutherford backscattering (RBS). The as-deposited films were amorphous but became crystalline (β-Ta2O5) at temperatures 〉 700 °C. The transmission electron microscopy (TEM) results on crystallisation behaviour were supported by X-ray diffraction data. The electrical properties of the Ta2O5 films have been characterised using MIS (metal/insulator/silicon) capacitor structures. Leakage values of 〈10-6 A cm-2 at 6 MV cm-1 equivalent applied electric field and breakdown strengths of 〉7 MV cm-1 at 1.6 μA were obtained for annealed layers. Compound dielectric constants (native silicon oxide thickness of about 2.5 nm plus Ta2O5 of various thicknesses) between 14 and 〉30 have been measured. The electrical properties reveal the potential use of Ta2O5 as a storage capacitor dielectric in 64 and 256 Mbit DRAM (dynamic random access memory) devices.

Additional Material: 13 Ill.