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  • Polymer and Materials Science  (2)
  • Growth Hormone/agonists/antagonists & inhibitors/blood/pharmacology/*physiology  (1)
  • 1
    Publikationsdatum: 1997-06-13
    Beschreibung: Retinal neovascularization is the major cause of untreatable blindness. The role of growth hormone (GH) in ischemia-associated retinal neovascularization was studied in transgenic mice expressing a GH antagonist gene and in normal mice given an inhibitor of GH secretion (MK678). Retinal neovascularization was inhibited in these mice in inverse proportion to serum levels of GH and a downstream effector, insulin-like growth factor-I (IGF-I). Inhibition was reversed with exogenous IGF-I administration. GH inhibition did not diminish hypoxia-stimulated retinal vascular endothelial growth factor (VEGF) or VEGF receptor expression. These data suggest that systemic inhibition of GH or IGF-I, or both, may have therapeutic potential in preventing some forms of retinopathy.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Smith, L E -- Kopchick, J J -- Chen, W -- Knapp, J -- Kinose, F -- Daley, D -- Foley, E -- Smith, R G -- Schaeffer, J M -- EY08670/EY/NEI NIH HHS/ -- New York, N.Y. -- Science. 1997 Jun 13;276(5319):1706-9.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Ophthalmology, Harvard Medical School and Children's Hospital, Boston, MA 02115, USA. smith_lo@a1.tch.harvard.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9180082" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Animals ; Endothelial Growth Factors/genetics/metabolism ; Growth Hormone/agonists/antagonists & inhibitors/blood/pharmacology/*physiology ; Hormone Antagonists/pharmacology ; Insulin-Like Growth Factor I/metabolism/pharmacology ; Ischemia ; Lymphokines/genetics/metabolism ; Mice ; Mice, Inbred C57BL ; Mice, Transgenic ; Peptides, Cyclic/pharmacology ; Recombinant Proteins/pharmacology ; Retinal Neovascularization/*etiology/metabolism/pathology ; Retinal Vessels ; Vascular Endothelial Growth Factor A ; Vascular Endothelial Growth Factors
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    ISSN: 0947-5117
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Maschinenbau
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 131-137 
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: The need for improved characterization of materials used in the fabrication of semiconductor devices has been driven by the semiconductor industry's desire to increase device densities on substrate. This need is reflected in the analytical surface science community by efforts to develop methods for detection of trace impurities on semiconductor substrates at extremely low levels. With improvements in standard techniques continually occurring, and with new methods of trace analysis always being developed, it is important to assess the relative abilities of the suite of surface analysis techniques available for materials characterization and to develop well-characterized standard samples for these comparisons. This paper reports on a collaborative effort to review the capabilities of several approaches to trace surface analysis. As a test case, Ni contamination of Si wafers in the dose range 1014-1010 cm-2 has been chosen. The emphasis of this paper will be on the capabilities of SARISA (surface analysis by resonant ionization of sputtered atoms) as an example of laser post-ionization secondary neutral mass spectrometry for the detection of contaminants in the near-surface region. Results on analyses of the same standard samples by other techniques will also be presented. These techniques include total reflection x-ray fluorescence and heavy ion backscattering spectrometry. The results of this comparison show that there are several techniques that can accurately determine metal contaminations on Si wafers in this concentration range and that the method of choice depends on other considerations, such as speed or accuracy of analysis.
    Zusätzliches Material: 8 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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