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  • General Chemistry  (8)
  • 61.40  (3)
  • 72.40  (3)
  • STRUCTURAL MECHANICS  (3)
  • 1
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    In:  CASI
    Publication Date: 2016-06-07
    Description: Apollo project - progress and national benefits
    Keywords: STRUCTURAL MECHANICS
    Type: Proceedings of the Fourth National Conference on the Peaceful Uses of Space; NASA-SP-51
    Format: application/pdf
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  • 2
    Publication Date: 2019-06-27
    Description: Structural mechanics of deformation and fracture - responses of model viscoelastic materials to impact
    Keywords: STRUCTURAL MECHANICS
    Type: NASA-CR-80918
    Format: application/pdf
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  • 3
    Publication Date: 2019-06-27
    Description: Mechanical behavior of materials with temperature dependent viscosity, using electric analogy on nonlinear Maxwell model
    Keywords: STRUCTURAL MECHANICS
    Type: ; ACE(
    Format: text
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 29 (1982), S. 63-68 
    ISSN: 1432-0630
    Keywords: 72.40 ; 73 ; 85 ; 60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties ofn +-window layers inp-i-n a-Si:H solar cells were characterised as a function ofn +-layer thickness, $$d_{n^ + } $$ , by measuring firstly the activation energyE a of the dark conductivity and secondly the built-in potentialV bi of the cells.E a was found to increase with decreasing $$d_{n^ + } $$ attaining values as high as 0.8 eV for $$d_{n^ + } $$ ≅5nm; bulk values, e.g.E a ≅. 2eV in the amorphous andE a〈0.01 eV in the microcrystalline case, were only observed for $$d_{n^ + } $$ 〉20nm and for $$d_{n^ + } $$ 〉200nm, respectively. In contrast,V bi did not depend on $$d_{n^ + } $$ at all and was further found to be consistent with expectations based on the Fermi level positions in bulkn + andp +-material. As a consequenceE a in very thin films can no longer be considered as a measure of (E C −E F), the distance of the Fermi level from the conduction band edge. The apparent inconsistency inherent to theE a and theV bi results can be resolved by assuming that the deposition of then +-material proceeds via the growth and coalescence of small islands.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 52 (1991), S. 335-338 
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.80 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract n-type a-Si:H films have been irradiated with light, electrons, protons and heavy ion beams. It is shown that the non-thermal creation of dangling-bond defects activates significant densities of previously inactive phosphorus dopants. The relevance of these results is discussed with respect to equilibration phenomena in doped material and with respect to degradation phenomena in a-Si:H solar cells.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Excess charge carrier kinetics in moderately doped pSi wafers were investigated with a contactless transient photoconductivity method, i.e. the time-resolved microwave conductivity (TRMC) method. The surface structure of the wafers was changed by etching and polishing, the volume structure by irradiation with high-energy electrons. Comparison of the photoconductivity decay after excitation by strongly absorbed light and by weakly absorbed light was used to distinguish between surface and volume decay processes. The experimental results deviate from predictions based on a linear surface decay rate. These results are discussed and suggestions are made for the use of transient photoconductivity measurements to characterize semiconductor wafers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 53 (1991), S. 235-240 
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.80 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Hydrogenated amorphous silicon (a-Si:H) films have been irradiated with H+, B+, P+, and Ar+ ion beams. The accumulation and the annealing of irradiation-induced defects has been investigated through a series of electronic transport and PDS measurements. We find that for all projectiles damage accumulation is dominated by atomic displacement collisions with the damage saturating for energy transfers in excess of about 10 eV/target atom. Annealing at elevated temperatures causes the conductivity of doped and irradiated a-Si:H films to increase according to stretched exponential decay curves. All annealing parameters derivable from such fits scale with the energy originally dissipated into atomic displacement collisions. For energy transfers up to 10 eV/target atom the activation energy for annealing increases up to a saturation value and, at the same time, an increasing fraction of the irradiation-induced defects becomes stable against annealing at moderate temperatures (T a〈250° C). We discuss these results with respect to damage accumulation data in crystalline silicon (c-Si) and with regard to the annealing of metastable defects in a-Si:H.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 54 (1992), S. 40-46 
    ISSN: 1432-0630
    Keywords: 61.40 ; 71.55 ; 82.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous (a-) semiconductors like a-Si:H and the chalcogenide glasses possess a general tendency to establish an overall equilibrium between the electronic system and the lattice with its dopant and defect sites. In the present paper the chemical interactions which establish these equilibria within the bulk of the a-semiconductor lattices are compared to chemical interactions in liquid electrolytes, particularly to those in H2O. These considerations reveal close similarities between autocompensation doping in a-semiconductors and acid/base reactions in H2O. The effects of light and field-effect induced defect formation, on the other hand, are shown to be related to the phenomenon of electrolysis in H2O. The consideration of these analogies further emphasizes the roles of charge-carrier localization and that of H-diffusion in promoting dopant and defect equilibration reactions in a-semiconductors.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 49 (1989), S. 165-169 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Zeitschrift für die chemische Industrie 51 (1938), S. 466-471 
    ISSN: 0044-8249
    Keywords: Chemistry ; General Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Additional Material: 11 Tab.
    Type of Medium: Electronic Resource
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