ISSN:
0948-1907
Keywords:
Ga2Se3
;
MOVPE
;
TEM
;
Wide-gap semiconductor
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We present results of a study using metal-organic vapor phase epitaxy (MOVPE) to synthesize thin films of cubic Ga2Se3 on both nearly lattice matched GaP and mismatched GaAs substrates. We find that trimethylgallium (TMGa) pre-reacts with the hydride H2Se in the gas phase to yield films which are only partially epitaxial and that the combination of TMGa with ditertiarybutylselenide produces films of the best crystal quality under steady state flow conditions. We also show that GaAs is an unsuitable substrate for MOVPE growth of gallium selenide due to exchange reactions at the interface leading to poorly bonded films.
Additional Material:
8 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/cvde.19960020507
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