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    Delayed Shutters For Dual-Beam Molecular Epitaxy (1989)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.
    Keywords: FABRICATION TECHNOLOGY
    Type: NPO-17724 , NASA Tech Briefs (ISSN 0145-319X); 13; 11; P. 78
    Format: text
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    NASA TECHNICAL REPORTS
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