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  • 1
    Publication Date: 2004-12-03
    Description: Radiation effects and testing programs on commercial off-the-shelf (COTS) devices and circuits, which are important for NASA programs, are discussed. Demands for increased performance levels in spacecraft systems is stimulating the use of electronic and photonic devices. Some advances in electronics to reach high performance will result in the miniaturization of devices, which will lead to increased radiation vulnerability.
    Keywords: Electronics and Electrical Engineering
    Type: ; 227-244
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  • 2
    Publication Date: 2009-04-30
    Description: The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers. However, a variety of LED technologies can be used in optocouplers and their sensitivity to proton displacement damage varies by about two orders of magnitude. Optocouplers are very simple hybrid devices, and the type of LED can be readily changed by the manufacturers with little cost impact. many optocoupler manufacturers purchase LEDs from outside sources with little knowledge or control of the manufacturing process used for the LED, leading to the possibility of very dramatic differences in radiation response (JPL has observed such differences for one type of optocoupler that is used in a hybrid power converter).
    Keywords: Electronics and Electrical Engineering
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  • 3
    Publication Date: 2018-06-08
    Description: Many bipolar integrated circuits are much more susceptible to ionizing radiation at low dose rates than they are at high dose rates typically used for radiation parts testing. Since the low dose rate is equivalent to that seen in space, the standard lab test no longer can be considered conservative and has caused the Air Force to issue an alert. Although a reliable radiation hardness assurance test has not yet been designed, possible mechanisms for low dose rate enhancement and hardness assurance tests are discussed.
    Keywords: Electronics and Electrical Engineering
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  • 4
    Publication Date: 2018-06-08
    Description: This paper compares low-paper op-amps, OPA241 (bipolar) and OPA336 (CMOS), from Burr-Brown, MAX473 (bipolar) and MAX409 (CMOS), characterizing their total dose response with a single 2.7V power supply voltage.
    Keywords: Electronics and Electrical Engineering
    Type: Nuclear and Plasma Sciences Society; Newport Beach, CA; United States
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  • 5
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    In:  Other Sources
    Publication Date: 2018-06-08
    Description: Proton testing of linear circuits has identified devices where significantly more damage occurs at equivalent total dose levels with protons than tests with gamma rays.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Transactions on Nuclear Science; Newport Beach, CA; United States|IEEE Transactions on Nuclear Science
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  • 6
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    Publication Date: 2018-06-08
    Keywords: Electronics and Electrical Engineering
    Type: The NASA Electronic Parts and Packaging (NEPP) '02 Workshop; Houston, TX; United States
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  • 7
    Publication Date: 2018-06-11
    Description: InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Transactions On Nuclear Science (ISSN 0018-9499); Volume 51; No. 6; 3572-3578
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  • 8
    Publication Date: 2018-06-11
    Description: Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); Volume 53; No. 6; 3455-3461
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  • 9
    Publication Date: 2018-06-08
    Description: The effects of radiation damage on modern electronic and optoelectronics is discussed.
    Keywords: Electronics and Electrical Engineering
    Type: 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications; Tsukuba; Japan
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  • 10
    Publication Date: 2018-06-08
    Keywords: Electronics and Electrical Engineering
    Type: NATO Sensors and Electronics Technology Panel Symposium on Space-Based Observation Technology; Samos; Greece
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