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  • 1
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    Reprogrammable field programmable gate array with integrated system for mitigating effects of single event upsets (2010)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: An integrated system mitigates the effects of a single event upset (SEU) on a reprogrammable field programmable gate array (RFPGA). The system includes (i) a RFPGA having an internal configuration memory, and (ii) a memory for storing a configuration associated with the RFPGA. Logic circuitry programmed into the RFPGA and coupled to the memory reloads a portion of the configuration from the memory into the RFPGA's internal configuration memory at predetermined times. Additional SEU mitigation can be provided by logic circuitry on the RFPGA that monitors and maintains synchronized operation of the RFPGA's digital clock managers.
    Keywords: Electronics and Electrical Engineering
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Systems and methods for detecting a failure event in a field programmable gate array (2009)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: An embodiment generally relates to a method of self-detecting an error in a field programmable gate array (FPGA). The method includes writing a signature value into a signature memory in the FPGA and determining a conclusion of a configuration refresh operation in the FPGA. The method also includes reading an outcome value from the signature memory.
    Keywords: Electronics and Electrical Engineering
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    NASA TECHNICAL REPORTS
  • 3
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    Fabrication and Characterization of Superconducting NbN Nanowire Single Photon Detectors (2006)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: We report on the fabrication and characterization of high-speed, single photon detectors using superconducting NbN nanowires at a wavelength of 1064 nm. A 15 by 15 micron detector with a detector efficiency of 40% has been measured. Due to kinetic inductance, the recovery time of such large area detectors is longer than that of smaller or single wire detectors. The recovery time of our detectors (50 ns) has been characterized by measuring the inter-arrival time statistics of our detector.
    Keywords: Electronics and Electrical Engineering
    Type: Applied Superconductivity Conference; Aug 28, 2006 - Sep 01, 2006; Seattle, WA; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Fabrication and Characterization of Superconducting NbN Nanowire Single Photon Detectors (2006)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: This viewgraph presentation describes the fabrication of large area superconducting Niobium Nitride nanowire single photon detectors. The topics include: 1) Introduction and Motivation; 2) Operation of SNSPD Detectors; 3) NbTiN Deposition; 4) Fabrication Details; 5) Backside Coupled SNSPD; 6) Measurement Apparatus; 7) Electrical Response of a 15x15 micrometer SNSPD to 1064nm radiation; 8) Detector Efficiency vs Bias Current; 9) Interarrival Time Plot; 10) Detector Linearity; and 11) Conclusion.
    Keywords: Electronics and Electrical Engineering
    Type: ASC 2006--1 , Applied Superconductivity Conference, Seattle, Washington, August 28 - September 1, 2006; Aug 28, 2006 - Sep 01, 2006; Seattle, WA; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 5
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    Fault-tolerant power distribution system (1987)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: A fault-tolerant power distribution system which includes a plurality of power sources and a plurality of nodes responsive thereto for supplying power to one or more loads associated with each node. Each node includes a plurality of switching circuits, each of which preferably uses a power field effect transistor which provides a diode operation when power is first applied to the nodes and which thereafter provides bi-directional current flow through the switching circuit in a manner such that a low voltage drop is produced in each direction. Each switching circuit includes circuitry for disabling the power field effect transistor when the current in the switching circuit exceeds a preselected value.
    Keywords: Electronics and Electrical Engineering
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    NASA TECHNICAL REPORTS
  • 6
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    Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors (2008)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: Superconducting-nanowire singlephoton detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x〈1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize NbxTi1 xN in the high-superconducting-transitiontemperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.
    Keywords: Electronics and Electrical Engineering
    Type: NPO-45603 , NASA Tech Briefs, July 2008; 14
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 7
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    Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors (2008)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: Superconducting-nanowire single-photon detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x〈1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize Nb(x)Ti(1-x)N in the high-superconducting-transition temperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.
    Keywords: Electronics and Electrical Engineering
    Type: NPO-45603 , NASA Tech Briefs, July 2008; 27
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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