Publication Date:
2019-07-13
Description:
Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.
Keywords:
Electronics and Electrical Engineering
Type:
JPL-CL-17-5359
,
IIRW - 2018 International Integrated Reliability Workshop; Oct 08, 2017 - Oct 12, 2017; Fallen Leaf Lake, CA; United States
Format:
text
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