Publikationsdatum:
2019-07-10
Beschreibung:
Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.
Schlagwort(e):
Electronics and Electrical Engineering
Materialart:
Non-Volatile Memory Technology Symposium 2000: Proceedings; 60-63; JPL-Publ-00-15
Format:
text
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