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  • Electronics and Electrical Engineering  (4)
  • 2000-2004  (4)
  • 1
    Publication Date: 2019-07-13
    Description: Tnis paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.
    Keywords: Electronics and Electrical Engineering
    Type: Space Technology and Applications; Feb 11, 2001 - Feb 15, 2001; Albuquerque, NM; United States
    Format: application/pdf
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  • 2
    Publication Date: 2019-07-13
    Description: Most nonlinear circuit analysis programs that exist today were designed primarily for transient analysis. By incorporating more accurate models in simulation programs, accurate predictions of GaAs field effect transistors (FET) behavior can be accomplished. However, should the designer need to simulate GaAs FETs that operate at high DC-to-RF conversion efficiencies, a more sophisticated model is needed. A relevant and appropriate method is called harmonic-balance, as described by Quere et al.
    Keywords: Electronics and Electrical Engineering
    Type: IMAPS Conference; Oct 09, 2001 - Oct 11, 2001; Baltimore, MD; United States
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  • 3
    Publication Date: 2019-07-13
    Description: Since the beginnings of space travel, various microwave power amplifier designs have been employed. These included Class-A, -B, and -C bias arrangements. However, shared limitation of these topologies is the inherent high total consumption of input power associated with the generation of radio frequency (RF)/microwave power. The power amplifier has always been the largest drain for the limited available power on the spacecraft. Typically, the conversion efficiency of a microwave power amplifier is 10 to 20%. For a typical microwave power amplifier of 20 watts, input DC power of at least 100 watts is required. Such a large demand for input power suggests that a better method of RF/microwave power generation is required. The price paid for using a linear amplifier where high linearity is unnecessary includes higher initial and operating costs, lower DC-to-RF conversion efficiency, high power consumption, higher power dissipation and the accompanying need for higher capacity heat removal means, and an amplifier that is more prone to parasitic oscillation. The first use of a higher efficiency mode of power generation was described by Baxandall in 1959. This higher efficiency mode, Class-D, is achieved through distinct switching techniques to reduce the power losses associated with switching, conduction, and gate drive losses of a given transistor.
    Keywords: Electronics and Electrical Engineering
    Type: IMAPS; Oct 09, 2001 - Oct 11, 2001; Baltimore, MD; United States
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  • 4
    Publication Date: 2019-08-16
    Description: This presentation outlines the performance characteristics of state-of-the-art nonvolatile memory devices and identifies charge storage mechanisms in nanocrystal floating gate materials.
    Keywords: Electronics and Electrical Engineering
    Type: Non-Volatile Memory Technology Symposium 2000: Proceedings; 80-86; JPL-Publ-00-15
    Format: text
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