ALBERT

Description: The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently.

Description: This paper reports on a new generation of aircraft-based rotating-vane style electric field mills designed and built at NASA's Marshall Spaceflight Center. The mills have individual microprocessors that digitize the electric field signal at the mill and respond to commands from the data system computer. The mills are very sensitive (1 V/m per bit), have a wide dynamic range (115 dB), and are very low noise (+/-1 LSB). Mounted on an aircraft, these mills can measure fields from +/-1 V/m to +/-500 kV/m. Once-per-second commanding from the data collection computer to each mill allows for precise timing and synchronization. The mills can also be commanded to execute a self-calibration in flight, which is done periodically to monitor the status and health of each mill.

Description: Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.

Description: We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.

Description: Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.

Description: The Lagrange multiplier theory developed in Part I of this study is applied to complete a relative calibration of a Citation aircraft that is instrumented with six field mill sensors. When side constraints related to average fields are used, the Lagrange multiplier method performs well in computer simulations. For mill measurement errors of 1 V m(sup -1) and a 5 V m(sup -1) error in the mean fair-weather field function, the 3D storm electric field is retrieved to within an error of about 12%. A side constraint that involves estimating the detailed structure of the fair-weather field was also tested using computer simulations. For mill measurement errors of 1 V m(sup -l), the method retrieves the 3D storm field to within an error of about 8% if the fair-weather field estimate is typically within 1 V m(sup -1) of the true fair-weather field. Using this type of side constraint and data from fair-weather field maneuvers taken on 29 June 2001, the Citation aircraft was calibrated. Absolute calibration was completed using the pitch down method developed in Part I, and conventional analyses. The resulting calibration matrices were then used to retrieve storm electric fields during a Citation flight on 2 June 2001. The storm field results are encouraging and agree favorably in many respects with results derived from earlier (iterative) techniques of calibration.

Description: This paper is dedicated to further presentations and discussions of the results from our new global self-consistent theoretical model of interacting ring current ions and electromagnetic ion cyclotron waves [Khazanov et al., 2006; here referred to as Paper 1]. In order to adequately take into account the wave propagation and refraction in a multi-ion plasmasphere, we explicitly include the ray tracing equations in our previous self-consistent model and use the general form of the wave kinetic equation [for details see Paper 1]. To demonstrate the effects of the EMIC wave propagation and refraction on the RC proton precipitations and heating of the thermal plasmaspheric electrons we simulate the May 1998 storm. The main findings of our simulation can be summarized as follows. Firstly, the wave induced precipitations have a quite fine structure, and are highly organized by location of the plasmapause gradient. The strongest fluxes of about 4 (raised dot) 10(exp 6) [(cm (raised dot) s (raised dot) sr)(sup -l)] are observed during the main and early recovery phases of the storm. The very interesting and probably more important finding is that in a number of cases the most intense precipitating fluxes are not simply connected to the most intense EMIC waves. The character of the EMIC wave power spectral density distribution over the equatorial wave normal angle is an extremely crucial for the effectiveness of the RC ion scattering. Secondly, comparison of the global proton precipitating patterns with the results from other ring current model [Kozyra et al., 1997] reveals that although we observe a qualitative agreement between localizations of the wave induced fluxes in the models, there is no quantitative agreement between the magnitudes of these fluxes. These differences are mainly due to a qualitative difference between the characters of the EMIC wave power spectral density distributions over the equatorial wave normal angle. Finally, the two energy sources to the plasmaspheric electrons are considered; (i) the heat fluxes caused by the EMIC wave energy absorption due to Landau resonance, and (ii) the heat fluxes due to Coulomb energy degradation of the RC o(+) ions. The heat fluxes caused by the EMIC wave energy absorption due to Landau resonance are observed in the postnoon-premidnight MLT sector, and maximize at the magnitude of 10l1 (eV/(cm(sup 2)(raised dot) s) at L=3.25, MLT=22 at 3400 UT after 1 May, 0000 UT. The greatest Coulomb energy deposition rates are about 2 (raised dot) 10(sup 10)(eV/(cm(sup 2)(raised dot) s) and observed during two periods; 32-48 hours, and 76-86 hours after 1 May, 0000 UT. The theoretically derived spatial structure of the thermal electron heating caused by interaction of the RC with plasmasphere is strongly supported by concurrent and conjugate plasma measurements from the plasmasphere, the RC, and the topside ionosphere [Gurgiolo et al., 20051.

Description: We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C).

Description: Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

Description: A light sensor substrate comprises a base made from a semi-conductive material and topped with a layer of an electrically non-conductive material. A first electrode and a plurality of carbon nanotube (CNT)-based conductors are positioned on the layer of electrically non-conductive material with the CNT-based conductors being distributed in a spaced apart fashion about a periphery of the first electrode. Each CNT-based conductor is coupled on one end thereof to the first electrode and extends away from the first electrode to terminate at a second free end. A second or gate electrode is positioned on the non-conductive material layer and is spaced apart from the second free end of each CNT-based conductor. Coupled to the first and second electrode is a device for detecting electron transfer along the CNT-based conductors resulting from light impinging on the CNT-based conductors.