Publication Date:
2017-06-24
Description:
Author(s): I. Battisti, V. Fedoseev, K. M. Bastiaans, A. de la Torre, R. S. Perry, F. Baumberger, and M. P. Allan The interpretation of scanning tunneling microscopy (STM) data on poorly metallic materials is challenging: one needs to take into account the partial penetration of the electric field into the sample, the so-called tip-induced band bending (TIBB). This effect is well known from STM experiments on semiconductors, but rarely discussed for correlated-electron systems. The authors find that in the lightly doped Mott insulator (Sr 1 − x La x ) 2 IrO 4 , TIBB is at the root of apparent discrepancies in the gap values measured by photoemission, optical measurements, and STM. They develop a model to extract the intrinsic Mott gap of the system, leading to agreement with results from other techniques. [Phys. Rev. B 95, 235141] Published Fri Jun 23, 2017
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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