Publication Date:
2015-06-30
Description:
Author(s): Mengkun Liu, Aaron J. Sternbach, Martin Wagner, Tetiana V. Slusar, Tai Kong, Sergey L. Bud'ko, Salinporn Kittiwatanakul, M. M. Qazilbash, Alexander McLeod, Zhe Fei, Elsa Abreu, Jingdi Zhang, Michael Goldflam, Siyuan Dai, Guang-Xin Ni, Jiwei Lu, Hans A. Bechtel, Michael C. Martin, Markus B. Raschke, Richard D. Averitt, Stuart A. Wolf, Hyun-Tak Kim, Paul C. Canfield, and D. N. Basov Infrared spectroscopy of VO 2 thin films at high spatial resolution shows new electronic and lattice states due to epitaxial strain that differ fundamentally from those in the bulk. This is the first ultra-broadband infrared near-field study of a correlated electron material, made possible by the newly developed synchrotron infrared near-field spectroscopy method (SINS) on the Advanced Light Source at Lawrence Berkeley National Laboratory. [Phys. Rev. B 91, 245155] Published Mon Jun 29, 2015
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink