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  • 1
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    Attenuation of epsilon(sub eff) of coplanar waveguide transmission lines on silicon substrates (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Attenuation and epsilon(sub eff) of Coplanar Waveguide (CPW) transmission lines were measured on Silicon substrates with resistivities ranging from 400 to greater than 30,000 ohm-cm, that have a 1000 angstrom coating of SiO2. Both attenuation and epsilon(sub eff) are given over the frequency range 5 to 40 GHz for various strip and slot widths. These measured values are also compared to the theoretical values.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Solid State Technology Branch of NASA Lewis Research Center: Fifth Annual Digest; p 57-60
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Development of Si(1-x)Ge(x) technology for microwave sensing applications (1993)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The progress for the first year of the work done under the Director's Discretionary Fund (DDF) research project entitled, 'Development of Si(1-x)Ge(x) Technology for Microwave Sensing Applications.' This project includes basic material characterization studies of silicon-germanium (SiGe), device processing on both silicon (Si) and SiGe substrates, and microwave characterization of transmission lines on silicon substrates. The material characterization studies consisted of ellipsometric and magneto-transport measurements and theoretical calculations of the SiGe band-structure. The device fabrication efforts consisted of establishing SiGe device processing capabilities in the Lewis cleanroom. The characterization of microwave transmission lines included studying the losses of various coplanar transmission lines and the development of transitions on silicon. Each part of the project is discussed individually and the findings for each part are presented. Future directions are also discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-106157 , E-7843 , NAS 1.15:106157
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    NASA TECHNICAL REPORTS
  • 3
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    An x-band peeled HEMT amplifier (1993)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of devices indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Solid State Technology Branch of NASA Lewis Research Center: Fifth Annual Digest; p 7-13
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    NASA TECHNICAL REPORTS
  • 4
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    Temperature Dependent Performance of Coplanar Waveguide (CPW) on Substrates of Various Materials (1994)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The attenuation (a) and effective dielectric constant (E(sub eff)) of Coplanar Waveguide (CPW) transmission lines on high-resistivity silicon and diamond substrates as a function of both temperature and frequency are presented. The technique used to obtain the values for a and E(sub eff) involves the use of a unique cryogenic probe station designed and built by NASA. Attenuation of gold CPW lines on diamond substrates is compared with that of superconducting CPW lines.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-106505 , E-8583 , NAS 1.15:106505 , MTT-S International Microwave Symposium; May 23, 1994 - May 28, 1994; San Diego, CA; United States
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  • 5
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    Microwave characterization of slotline on high resistivity silicon for antenna feed network (1993)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-106058 , E-7659 , NAS 1.15:106058 , 1992 IEEE AP-S International Symposium; Jun 27, 1993 - Jul 02, 1993; Ann Arbor, MI; United States
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  • 6
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    A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device (1993)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Microwave and Guided Wave Letters (ISSN 1051-8207); 3; 4; p. 107-109.
    Format: text
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  • 7
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    Characteristics of III-V Semiconductor Devices at High Temperature (1994)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-106574 , E-8801 , NAS 1.15:106574 , International High Temperature Electronics Conference; Jun 05, 1994 - Jun 10, 1994; Charlotte, NC; United States
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