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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (3)
  • 1
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    Distributed effect in GaAs MESFET (1979)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: In order to obtain higher output power, the width of a single cell MESFET must be large. When it becomes too large the distributed effect along the width direction tends to limit the output power. It is found that the distributed effect is important when the gate width not less than 150 microns and that the gain decreases with gate width. Also found is that spurious oscillations occur due to line resonances at much higher frequencies than can be accounted for by the instability factor in the discrete device model.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Solid-State Electronics; 22; Dec. 197
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    An investigation of thermal resistance in single- and multiple-cell GaAs MESFETs (1979)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: Thermal resistances among FETs of a variable number of gates in parallel are compared. Although the thermal resistance per cell for multiple cells is higher, the total thermal resistance is still low because all the cells are parallel to one another. This implies that the multiple-cell structure is capable of dissipating more power than the single-cell structure and therefore of being used as a power FET.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Electronics; 47; Aug. 197
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Velocity overshoot effect on a short-gate microwave MESFET (1979)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Electronics; 47; July 197
    Format: text
    Location Call Number Expected Availability
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    NASA TECHNICAL REPORTS
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