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  • 1
    Publication Date: 2011-12-09
    Description: Microstrip ring resonators operating at 35 GHz were fabricated from laser ablated YBCO films deposited on lanthanum aluminate substrates. They were measured over a range of temperatures and their performances compared to identical resonators made of evaporated gold. Below 60 Kelvin the superconducting strip performed better than the gold, reaching an unloaded Q approximately 1.5 times that of gold at 25 K. A shift in the resonant frequency follows the form predicted by the London equations. The Phenomenological Loss Equivalence Method is applied to the ring resonator and the theoretically calculated Q values are compared to the experimental results.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 39; 1480-148
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  • 2
    Publication Date: 2011-08-19
    Description: A novel waveguide power transmission measurement technique was developed to extract the complex conductivity of superconducting thin films at microwave frequencies. The microwave conductivity was taken of two laser ablated YBa2Cu3O(7-delta) thin films on LaAlO3 with transition temperatures of approximately 86.3 and 82 K, respectively, in the temperature range 25 to 300 K. From the conductivity values, the penetration depth was found to be approximately 0.54 and 0.43 micron, and the surface resistance (R sub s) to be approximately 24 and 36 micro-Ohms at 36 GHz and 76 K for the two films under consideration. The R sub s values were compared with those obtained from the change in the Q-factor of a 36 GHz Te sub 011-mode (OFHC) copper cavity by replacing one of its end walls with the superconducting sample. This technique allows noninvasive characterization of high transition superconducting thin films at microwave frequencies.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Magnetics (ISSN 0018-9464); 27; 1284-128
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  • 3
    Publication Date: 2011-08-19
    Description: Epitaxial YBa2Cu3O7 films were grown on several microwave substrates. Surface resistance and penetration depth measurements were performed to determine the quality of these films. Here, the properties of these films on key microwave substrates are described. The fabrication and characterization of a microwave ring resonator circuit to determine transmission line losses are presented. Lower losses than those observed in gold resonator circuits were observed at temperatures lower than critical transition temperature. Based on these results, potential applications of microwave superconducting circuits such as filters, resonators, oscillators, phase shifters, and antenna elements in space communication systems are identified.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 4
    Publication Date: 2011-08-19
    Description: Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness, and also the film morphology, which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type, with film thickness becoming important as it decreases towards 1000 A. It is also found that the films with a mixed grain orientation (both a-axis and c-axis oriented grains) have poorer microwave properties as compared with the primarily c-axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Magnetics (ISSN 0018-9464); 27; 2940-294
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  • 5
    Publication Date: 2013-08-31
    Description: The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response was studied of laser ablated YBa2Cu3O(7-x)/LaAlO3 thin films as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA, Goddard Space Flight Center, AMSAHTS 1990: Advances in Materials Science and Applications of High Temperature Superconductors; p 78-81
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  • 6
    Publication Date: 2011-08-24
    Description: The microwave response of YBa2Cu3O(7-delta) superconducting thin films deposited on LaAlO3, MgO, YSZ, and LaGaO3 substrates are studied. It is found that the microwave transmission properties are very weakly dependent on temperature in the normal state but change drastically upon transition to the superconducting state. In particular, the transmission decreases and there is a negative phase shift with respect to the phase at room temperature when the sample is cooled through its transition temperature. The magnetic penetration depth for all the films was determined from the surface reactance of the films. The microwave complex conductivity is determined in both the normal and the superconducting state. It is observed that both sigma1 and sigma2 increase in transition to the superconducting state. The surface resistivity is calculated for all the films.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics (ISSN 0021-8979); 70; 5450-546
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  • 7
    Publication Date: 2019-06-28
    Description: The response is reported of thin films of YBa2Cu3O(7-delta) with either a very grainy or a smooth epitaxial morphology to visible radiation. SrTiO3 substrates were employed for both types of films. The grainy films were formed by sequential multi-layer electron beam evaporation while the epitaxial films were formed by laser ablation. Both films were patterned into H shaped detectors via a negative photolithographic process employing a Br/ethanol etchant. The bridge region of the H was 50 microns wide. The patterned films formed by laser ablation and sequential evaporation had critical temperatures of 74 K and 72 K respectively. The bridge was current biased and illuminated with chopped He-Ne laser radiation and the voltage developed in response to the illumination was measured. A signal was detected only above the critical temperature and the peak of the response coincided with the resistive transition for both types of films although the correspondence was less exact for the grainy film. The details of the responses and their analysis are presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 8
    Publication Date: 2019-07-13
    Description: Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-101432 , E-4536 , NAS 1.15:101432 , Conference on Science and Technology of Thin Film Superconductors; Nov 14, 1988 - Nov 18, 1988; Colorado Springs, CO; United States
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  • 9
    Publication Date: 2019-07-13
    Description: Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-101388 , E-4448 , NAS 1.15:101388 , National Vacuum Symposium; Oct 03, 1988 - Oct 07, 1988; Atlanta, GA; United States
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  • 10
    Publication Date: 2019-07-13
    Description: A major factor limiting the efficiency of the GaAs-GaAlAs solar cell is the rate of recombination at the GaAs-AlGaAs interface. Evidence has been previously reported which indicates that recombination at this interface can be greatly reduced if the AlGaAs layer is grown at lower than normal temperatures. The authors examine the epitaxial growth of AlGaAs on GaAs using a horizontal OMCVD reactor and an excimer laser operating in the UV (lambda = 193 nm) region. The growth temperatures were 450 and 500 C. The laser beam was utilized in two orientations: 75 deg angle of incidence and parallel to the substrate. Film composition and structure were determined by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). Auger analysis of epilayers grown at 500 C with the laser impinging show no carbon or oxygen contamination of the epitaxial layers or interfaces. TEM diffraction patterns of these same epilayers exhibit single crystal (100) zone axis patterns.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Photovoltaic Specialists Conference; May 04, 1987 - May 08, 1987; New Orleans, LA; United States
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