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  • 1
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    Coplanar waveguide microwave filter of YBa2Cu3O7 (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: Thin film low-pass microwave filters have been made with laser-ablated YBa2Cu3O(7-delta) (YBCO) deposited on LaAlO3 substrates, using a coplanar waveguide structure. The coplanar waveguide sections had dimensions suited for integrated circuits. Measured losses in liquid nitrogen were superior to the loss in a similar thin-film copper filter throughout the 0 to 9.5 GHz pass-band. A simple transmission-line model is adequate for filter design using YBCO films with repeatable characteristics. The measured filters demonstrate the performance of fully patterned YBCO after sealing in space-qualifiable hermetic packages. Five packaged filters of this design were delivered to the Naval Research Laboratory as candidates for space flight in the High Temperature Superconductivity Space Experiment.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: In: Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991 (A93-27243 09-33); p. 95-100.
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  • 2
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    Modeling of planar quasi-TEM superconducting transmission lines (1992)
    In:  Other Sources
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    Publication Date: 2011-08-24
    Description: An application of the phenomenological loss equivalence method (Lee and Itoh, 1989) in modeling the microwave behavior of planar quasi-TEM superconducting transmission lines is presented. For validation of the model, data are used from measurements of a YBCO superconducting thin-film coplanar-waveguide lowpass filter on a lanthanum aluminate substrate. Measured and modeled S-parameters of an existing superconducting coplanar waveguide lowpass filter agree to within 0.3 dB in magnitude and 0.5 radians in phase. Extracted values for penetration depth and real part of the conductivity of the superconducting film are within 10 percent of other researchers' findings.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 40; 6, Ju
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  • 3
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    Design and performance of a high-Tc superconductor coplanar waveguide filter (1991)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The design of a coplanar waveguide low-pass filter made of YBa2Cu3O(7-delta) (YBCO) on an LaAlO3 substrate is described. Measurements were incorporated into simple models for microwave CAD analysis to develop a final design. The patterned and packaged coplanar waveguide low-pass filter of YBCO, with dimensions suited for integrated circuits, exhibited measured insertion losses when cooled in liquid nitrogen superior to those of a similarly cooled thin-film copper filter throughout the 0 to 9.5 GHz passband. Coplanar waveguide models for use with thin-film normal metal (with thickness either greater or less than the skin depth) and YBCO are discussed and used to compare the losses of the measured YBCO and copper circuits.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 39; 1455-146
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  • 4
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    High-Tc superconductor coplanar waveguide filter (1991)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Coplanar waveguide (CPW) low-pass filters made of YBa2Cu3O(7-delta) (YBCO) on LaAlO3 substrates, with dimensions suited for integrated circuits, were fabricated and packaged. A complete filter gives a true idea of the advantages and difficulties in replacing thin-film metal with a high-temperature superconductor in a practical circuit. Measured insertion losses in liquid nitrogen were superior to the loss of a similar thin-film copper filter throughout the 0- to 9.5-GHz passband. These results demonstrate the performance of fully patterned YBCO in a practical CPW structure after sealing in a hermetic package.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters (ISSN 0741-3106); 12; 197-199
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  • 5
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    A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications (1992)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG). As a negative voltage is applied to the Schottky contact, the depletion layer between the Schottky contact and the 2-DEG expands and the junction capacitance decreases, resulting in a nonlinear capacitance-voltage characteristic. In this paper, we outline the theory, design, fabrication, and evaluation of the new device. Recent results include devices having cutoff frequencies of 1 THz and above. Preliminary multiplier results are also presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings; p 93-109
    Format: application/pdf
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  • 6
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    Varactor diodes for millimeter and submillimeter wavelengths (1992)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings; p 73-92
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  • 7
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    Planar GaAs diodes for THz frequency mixing applications (1992)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings; p 600-615
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  • 8
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    A wide-band 760-GHz planar integrated Schottky receiver (1993)
    In:  Other Sources
    Details
    Publication Date: 2019-08-14
    Description: A wideband planar integrated heterodyne receiver has been developed for use at submillimeter-wave to FIR frequencies. The receiver consists of a log-periodic antenna integrated with a planar 0.8-micron GaAs Schottky diode. The monolithic receiver is placed on a silicon lens and has a measured room temperature double side-band conversion loss and noise temperature of 14.9 +/- 1.0 dB and 8900 +/- 500 K, respectively, at 761 GHz. These results represent the best performance to date for room temperature integrated receivers at this frequency.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Microwave and Guided Wave Letters (ISSN 1051-8207); 3; 7; p. 205-207.
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  • 9
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    A 250 GHz planar low noise Schottky receiver (1993)
    In:  Other Sources
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    Publication Date: 2019-08-27
    Description: A planar quasi-optical Schottky receiver based on the quasi-integrated horn antenna has been developed and tested over the 230-280 GHz bandwidth. The receiver consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended on a thin dielectric membrane in an etched-pyramidal horn cavity. The diode has a 1.21 micron anode diameter and a low parasitic capacitance due to the use of an etched surface channel. The antenna-mixer results in a measured DSB conversion loss and noise temperature at 258 GHz of 7.2 dB +/- 0.5 dB and 1310 K +/- 70 K, respectively, at room temperature. The design is compatible with SIS mixers, and the low cost of fabrication and simplicity makes it ideal for submillimeter-wave imaging arrays requiring a 10-20 percent bandwidth.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Infrared and Millimeter Waves (ISSN 0195-9271); 14; 4; p. 737-748.
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  • 10
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    Consideration of velocity saturation in the design of GaAs varactor diodes (1993)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. Experimental data is presented which confirms that improved multiplier performance can be achieved.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Microwave and Guided Wave Letters (ISSN 1051-8207); 3; 6; p. 161-163.
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