Publication Date:
2019-06-28
Description:
The feasibility of developing a high temperature capacitor for 1100 F operation which is as small and light as conventional capacitors for normal operating temperatures is discussed. Pyrolyic boron nitride (PBN) was selected for the dielectric. The PBN capacitors were made by slicing and lapping material from thick blocks and then sputtering thin film electrodes. These capacitors had breakdown strengths of 7,000 volts per mil and a dissipation factor of less than 0.001 at 1100 F. Additional processing improvements were made after testing a multi-layer or stacked PBN capacitor for 1,000 hours at 1100 F. Sputter etching the wafers before depositing electrodes resulted in a reduction in dissipation factor. A sputtered boron nitride film applied to the outer electrode surfaces produced a more stable capacitor. A design for a 0.1 mu F capacitor and a summary of PBN wafer fabrication costs are given.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.; p 25-28
Format:
application/pdf
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