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  • 1
    facet.materialart.
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    Lateral tunneling through voltage-controlled barriers (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The paper reports on a detailed experimental investigation of lateral tunneling between electrodes of a two-dimensional electron gas separated by the voltage-controlled barrier of a nanometer Schottky gate. The experimental data are modeled using the WKB method to calculate the tunneling probability of electrons through a barrier whose shape is determined from a solution of the two-dimensional Poisson equation. This model is in excellent agreement with the experimental data over a two order of magnitude range of current.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 59; 213-215
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Theoretical transducer properties of piezoelectric insulator FET transducers (1975)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: An oriented piezoelectric film incorporated in the insulator region of a silicon insulated-gate field-effect transistor (FET) results in a sensitive high-frequency strain transducer. Theory governing the transducer properties of the piezoelectric insulator FET transducer is presented. Equations are developed which relate the drain current of the device to induced polarizations of the piezoelectric layer. The highest frequency of surface strains to which the FET transducer can respond is determined by the FET frequency response - ultimately by the channel transit time. This frequency can extend to the GHz range. The low-frequency response to applied strain is determined by the dielectric relaxation frequency of the piezoelectric layer.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics; 46; Nov. 197
    Format: text
    Location Call Number Expected Availability
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