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  • 1
    Publication Date: 2019-06-28
    Description: High temperature superconductors (HTS) hold the promise for applications in magnetic levitation bearings, vibration damping, and torque coupling. Traditional magnetic suspension systems require active feedback and vibration controls in which power consumption and low frequency vibration are among the major engineering concerns. HTS materials have been demonstrated to be an enabling approach towards such problems due to their flux trapping properties. In our laboratory at TCSUH, we have been conducting a series of experiments to explore various mechanical applications using HTS. We have constructed a 30 lb. model flywheel levitated by a hybrid superconducting magnetic bearing (HSMB). We are also developing a levitated and vibration-dampled platform for high precision instrumentation. These applications would be ideal for space usages where ambient temperature is adequate for HTS to operate properly under greatly reduced cryogenic requirements. We will give a general overview of these potential applications and discuss the operating principles of the HTS devices we have developed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Langley Research Center, Second International Symposium on Magnetic Suspension Technology, Part 1; p 111-118
    Format: application/pdf
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  • 2
    Publication Date: 2019-06-27
    Description: A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-135013
    Format: application/pdf
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  • 3
    Publication Date: 2019-06-27
    Description: A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-159524
    Format: application/pdf
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