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Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si (1991)

Reid, J. S. ; Nicolet, Marc A. ; Chen, J. S. ; [et al.]

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Publication Date: 2019-07-12

Description: Electrical measurements on shallow Si n+-p junction diodes with a 30-nm TiSi2 contacting layer demonstrate that an 80-nm-thick amorphous Ta36Si14N50 film prepared by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 plasma very effectively prevents the interaction between the Si substrate with the TiSi2 contacting layer and a 500-nm Cu overlayer. The Ta36Si14N50 diffusion barrier maintains the integrity of the I-V characteristics up to 900 C for 30-min annealing in vacuum. It is concluded that the amorphous Ta36Si14N50 alloy is not only a material with a very low reactivity for copper, titanium, and silicon, but must have a small diffusivity for copper as well.

Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING

Type: IEEE Electron Device Letters (ISSN 0741-3106); 12; 321-323

Format: text

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