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    Stable, high quantum efficiency silicon photodiodes for vacuum-UV applications (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Silicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the SiSiO2 interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120 percent at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. The possibility of using these photodiodes as vacuum ultraviolet detector standards is being currently investigated.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Ultraviolet Technology II; Apr 04, 1988 - Apr 05, 1988; Orlando, FL; United States
    Format: text
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