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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (1)
  • 1975-1979  (1)
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    Thermally grown oxide and diffusions for automatic processing of integrated circuits (1979)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A totally automated facility for semiconductor oxidation and diffusion was developed using a state-of-the-art diffusion furnace and high temperature grown oxides. Major innovations include: (1) a process controller specifically for semiconductor processing; (2) an automatic loading system to accept wafers from an air track, insert them into a quartz carrier and then place the carrier on a paddle for insertion into the furnace; (3) automatic unloading of the wafers back onto the air track, and (4) boron diffusion using diborane with plus or minus 5 percent uniformity. Processes demonstrated include Wet and dry oxidation for general use and for gate oxide, boron diffusion, phosphorous diffusion, and sintering.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-78247
    Format: application/pdf
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