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  • 1
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    A new planar injection-gated bulk switching device based upon deep impurity trapping (1980)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: Under the proper conditions, double-injection (DI) diodes with partially compensated deep impurities will exhibit 'S'-type switching characteristics similar to conventional silicon-controlled rectifiers (SCR's). A practical injection-gating scheme has been achieved for the first time in a planar configuration to control the switching behavior of these devices, marked by extreme sensitivity of the gate over a range of switching voltages. An experiment to demonstrate the feasibility of these devices for practical application is described. Finally, a phenomenological explanation is presented for the gate-controlled switching of these devices.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices; ED-27; July 198
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Variable N-type negative resistance in an injection-gated double-injection diode (1981)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices; ED-28; Mar. 198
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Post-breakdown bulk oscillations in gold-doped silicon p/+/-i-n/+/ double-injection diodes (1980)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: Experimental results on postbreakdown bulk oscillations in n-type gold-doped phosphorus-compensated p(+)-i-n(+) double-injection diodes is presented. It is suggested that changes observed in the postbreakdown oscillation frequency and amplitude are due to changes in the prebreakdown characteristics. An empirical relationship for the frequency of oscillation is derived. It is concluded that the postbreakdown oscillations are drift-related, although their exact mechanism is not known.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Solid-State Electronics; 23; Mar. 198
    Format: text
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    NASA TECHNICAL REPORTS
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