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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (105)
  • 1990-1994  (105)
  • 1985-1989
  • 1991  (105)
  • 1
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    Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 58; 275-277
    Format: text
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  • 2
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    Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si (1991)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Electrical measurements on shallow Si n+-p junction diodes with a 30-nm TiSi2 contacting layer demonstrate that an 80-nm-thick amorphous Ta36Si14N50 film prepared by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 plasma very effectively prevents the interaction between the Si substrate with the TiSi2 contacting layer and a 500-nm Cu overlayer. The Ta36Si14N50 diffusion barrier maintains the integrity of the I-V characteristics up to 900 C for 30-min annealing in vacuum. It is concluded that the amorphous Ta36Si14N50 alloy is not only a material with a very low reactivity for copper, titanium, and silicon, but must have a small diffusivity for copper as well.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters (ISSN 0741-3106); 12; 321-323
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  • 3
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    Lateral tunneling through voltage-controlled barriers (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The paper reports on a detailed experimental investigation of lateral tunneling between electrodes of a two-dimensional electron gas separated by the voltage-controlled barrier of a nanometer Schottky gate. The experimental data are modeled using the WKB method to calculate the tunneling probability of electrons through a barrier whose shape is determined from a solution of the two-dimensional Poisson equation. This model is in excellent agreement with the experimental data over a two order of magnitude range of current.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 59; 213-215
    Format: text
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  • 4
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    Indium gallium arsenide microwave power transistors (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 39; 1069-107
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  • 5
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    Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W/sq cm, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 58; 2291-229
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  • 6
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    An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness, and also the film morphology, which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type, with film thickness becoming important as it decreases towards 1000 A. It is also found that the films with a mixed grain orientation (both a-axis and c-axis oriented grains) have poorer microwave properties as compared with the primarily c-axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Magnetics (ISSN 0018-9464); 27; 2940-294
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  • 7
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    Extended long-wavelength lambda = 11-15-micron GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: Success has been achieved in extending the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron. High responsivity of 0.5 A/W, high quantum efficiency of 12 percent, and high detectivity as well as an excellent noise equivalent temperature difference of 4 mK have been achieved at T = 50 K. High performance of 19 mK has also been achieved at an even higher temperature of 60 K.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics (ISSN 0021-8979); 70; 5101-510
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  • 8
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    An extended Reed Solomon decoder design (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: It has previously been shown that the Reed-Solomon (RS) codes can correct errors beyond the Singleton and Rieger Bounds with an arbitrarily small probability of a miscorrect. That is, an (n,k) RS code can correct more than (n-k)/2 errors. An implementation of such an RS decoder is presented in this paper. An existing RS decoder, the AHA4010, is utilized in this work. This decoder is especially useful for errors which are patterned with a long burst plus some random errors.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The 1991 3rd NASA Symposium on VLSI Design; 9 p
    Format: application/pdf
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  • 9
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    A new approach to equipment testing (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Considerable controversy has arisen during the recent discussions over a new version of the RTCA DO160C/ED 14C Section 22 document at the European Committee for Aviation Electronics. Section 22 is concerned with lightning waveform tests to equipment. Investigations of some of these controversies with circuit analysis and measurements indicate the impedance characteristics required of the transient generators and the possibility of testing to a voltage limit even for current waveforms.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Kennedy Space Center, The 1991 International Aerospace and Ground Conference on Lightning and Static Electricity, Volume 1; 10 p
    Format: application/pdf
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  • 10
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    The electromagnetic environment in CFC structures (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Extensive measurements of induced voltages and currents were made using a CFC (carbon fiber composites) horizontal stabilizer from the A320 as a test bed. The work was done to investigate the efficacy of various protection schemes to reduce the magnitudes of the induced voltages and validate a computer program INDCAL. Results indicate that a good understanding of the various induced voltage mechanisms including the long wave effect due to current redistribution was obtained.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Kennedy Space Center, The 1991 International Aerospace and Ground Conference on Lightning and Static Electricity, Volume 1; 10 p
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