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  • ELECTRONIC EQUIPMENT  (1)
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    Effects of intrinsic region width in Si/Li/ p-i-n diodes (1974)
    In:  Other Sources
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    Publication Date: 2011-08-16
    Description: Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.
    Keywords: ELECTRONIC EQUIPMENT
    Type: Solid-State Electronics; 17; Apr. 197
    Format: text
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