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  • Cooper pair  (1)
  • Solid-State Physics  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Unusual Photon Energy Dependence of the Cooper Pair Breaking Rate in YBa2Cu3O7−δ Epitaxial Thin Films (1999)
    Springer
    Journal of superconductivity 12 (1999), S. 675-680 
    Details
    ISSN: 1572-9605
    Keywords: YBCO ; Cooper pair ; thin films ; ultrafast phenomena
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The transient photoimpedance response of epitaxial YBa2Cu3O7−δ thin films has been studied using 100 fs Ti:Sapphire laser pulse excitation. Both temperature and photon energy dependence of the fast optical response signal (whose temperature dependence can be explained by a kinetic inductance model involving Cooper pair breaking) were studied. The pair breaking rate is strongly photon energy-dependent, with a resonance around 1.5 eV with a width of only 100 meV, which is very surprising given the strong electron correlation in this metallic system and may be explained in terms of the stripe phase model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007708304186
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    Paper (German National Licenses)
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  • 2
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    In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization (2004)
    In:  Other Sources
    Details
    Publication Date: 2019-07-18
    Description: The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.
    Keywords: Solid-State Physics
    Type: International Thermal Detectors Workshop (TDW 2003); P2; NASA/CP-2004-212748
    Format: text
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    NASA TECHNICAL REPORTS
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