Publication Date:
2018-10-06
Description:
Author(s): Shan Wu, Xuelin Yang, Haishan Zhang, Lin Shi, Qing Zhang, Qiuyu Shang, Zeming Qi, Yue Xu, Jie Zhang, Ning Tang, Xinqiang Wang, Weikun Ge, Ke Xu, and Bo Shen Carbon (C) doping is essential for producing semi-insulating GaN for power electronics. However, to date the nature of C doped GaN, especially the lattice site occupation, is not yet well understood. In this work, we clarify the lattice site of C in GaN using polarized Fourier-transform infrared and... [Phys. Rev. Lett. 121, 145505] Published Fri Oct 05, 2018
Keywords:
Condensed Matter: Structure, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
Permalink