Publication Date:
2012-08-24
Description:
Author(s): J. J. Zhang, G. Katsaros, F. Montalenti, D. Scopece, R. O. Rezaev, C. Mickel, B. Rellinghaus, L. Miglio, S. De Franceschi, A. Rastelli, and O. G. Schmidt Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibi... [Phys. Rev. Lett. 109, 085502] Published Thu Aug 23, 2012
Keywords:
Condensed Matter: Structure, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
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