Publication Date:
2012-08-02
Description:
Author(s): Lee Carroll, Peter Friedli, Stefan Neuenschwander, Hans Sigg, Stefano Cecchi, Fabio Isa, Daniel Chrastina, Giovanni Isella, Yuriy Fedoryshyn, and Jérôme Faist Direct-gap gain up to 850 cm -1 at 0.74 eV is measured and modeled in optically pumped Ge-on-Si layers for photoexcited carrier densities of 2.0×10 20 cm -3 . The gain spectra are correlated to carrier density via plasma-frequency determinations from reflection spectra. Despite significant gain, optic... [Phys. Rev. Lett. 109, 057402] Published Wed Aug 01, 2012
Keywords:
Condensed Matter: Electronic Properties, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
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