ISSN:
1432-0630
Keywords:
61.70-r
;
61.70.At
;
61.70.Sk
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The electrical activation of boron implanted in crystalline and preamorphized silicon has been investigated during rapid thermal annealing performed with halogen lamps. Samples implanted with B+ fluences ranging between 5×1014 and 1×1016cm−2 and treated at temperatures between 900°C and 1100°C have been examined. When boron is implanted in crystalline Si, activation proceeds slowly atT〈1000°C and cannot be completed in times typical of rapid thermal annealing (a few tens of seconds). The analysis of carrier profiles indicates that the time constant for activation is strongly affected by local damage and dopant concentration. If the total boron concentration exceeds equilibrium solubility, precipitation occurs concomitant to activation, even if the substitutional boron fraction is still lower than equilibrium solubility. ForT≧1000°C complete activation is obtained in times of about 10 s. In the case of preamorphized Si the activation occurs very quickly, during the recrystallization of the amorphous layer, for all the examined temperatures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615499
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