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Fitting a Model to Floating Gate Prompt Charge Loss Test Data for the Samsung 8 Gb SLC NAND Flash Memory (2016)

Edmonds, L. D. ; Allen, G.R. ; Irom, F.

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Publication Date: 2019-08-24

Description: A recent model provides risk estimates for the deprogramming, of initially programmed floating gates, via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

Keywords: Computer Operations and Hardware

Type: JPL-CL-16-4300 , European Conference on Radiation and its Effects on Components and Systems (RADECS 2016); Sep 19, 2016 - Sep 23, 2016; Bremen; Germany

Format: text

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