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  • 1
    Electronic Resource
    Electronic Resource
    Numerical solution for the flow of highly viscous fluid in agitated vessel with anchor impeller (1982)
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 28 (1982), S. 385-391 
    Details
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Fluid motion in an agitated vessel with an anchor impeller is characterized by flow in a horizontal plane induced by the vertical arms of the impeller rotating near the vessel wall. A numerical algorithm of the two-dimensional flow in the horizontal plane is established using an iterative method for the determination of the boundary values of stream function. The computational results of the velocity profiles and agitation power are compared with those of the experiments, and it is shown that the numerical method used in this study is very useful to analyze the flow past the vertical arms of an anchor impeller.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/aic.690280304
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation in preparation of oxide superconducting films by MBE using NO2 and O3 gases (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 353-357 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In order to prepare oxide superconducting films by molecular beam epitaxy (MBE), we developed a compact NO2 supersonic molecular beam source and a new ozone jet generator to supply oxidizing gases with high controllability. Using these sources, oxide superconducting films of REBa2Cu3Ox (RE ≡ Nd, Y) were prepared on either MgO or SrTiO3 substrates. Because of the sufficiently low pressure during deposition, the oxidation process of the metals, especially of copper, by the oxidizing gases and the crystallization and surface flatness of the films were studied in situ by XPS and reflection high-energy electron diffraction (RHEED) together with effective cleaning of the substrates by the oxidizing gases.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190166
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  • 3
    Electronic Resource
    Electronic Resource
    Oxidation of metals by an oxygen ion beam in the MBE process (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 365-368 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy was used to study the oxidation of Cu by oxygen plasma generated from a Kaufman ion gun. It was found that Cu was much less oxidized in co-evaporation with Ba or Nd compared to Cu-only evaporation when the total flux density of supplied metals and the oxygen plasma conditions were similar. It was also found that elemental Ba or Nd deposited on a CuO film at room temperature deoxidized the CuO.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190168
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  • 4
    Electronic Resource
    Electronic Resource
    Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 619-622 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The incorporation and amphoteric behavior of Si impurities in Si-doped (100) oriented molecular beam epitaxial (MBE) GaAs layers grown under different As4/Ga flux ratios but with a fixed Si flux have been studied using Hall effect measurements, photothermal ionization spectroscopy and photoluminescence. The Si donor concentration increases substantially with increasing As4/Ga flux ratio, while the Si acceptor concentration remains less than ∼ 1013 cm-3, regardless of the variation of As4/Ga flux ratio. The observed increase of carrier concentration with increasing V/III ratio is not due to a change of site preference of Si impurities from Ga to As sublattice sites as previously supposed, but is due to the increase in incorporation of Si donor. This result can be explained by the kinetic effects associated with surface reaction processes involved in Si impurity incorporation. From these results it is clear that the sticking coefficient of Si is less than unity, and varies with the growth conditions.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740141010
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  • 5
    Electronic Resource
    Electronic Resource
    Defect formation observed by AES in a-SiO2 films prepared by photochemical vapour deposition (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 435-439 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Damageless conditions in AES measurement were examined carefully on both thermally oxidized and photochemical vapour deposited amorphous SiO2 films as a function of dose rate and total dose. The lower dose rate resulted in the formation of a higher density of oxygen-deficient defects under the constant total dose condition. Among the films examined, it was found that F-doped films prepared by photochemical vapour deposition best resisted electron damage. The results are discussed using the model of defect generation consisting of a cascade process, bond breaking and diffusion of oxygen.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740160190
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