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  • Chemistry  (2)
  • 73.20At  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Critical point energies in hcp and fcc cobalt from appearance potential spectra (1991)
    Springer
    Applied physics 52 (1991), S. 167-170 
    Details
    ISSN: 1432-0630
    Keywords: 73.20At ; 73.20Mf
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Appearance potential spectra have been measured for (low-temperature) hcp and (high-temperature) fcc cobalt. The measurements allowed a determination of the transition temperatures of (690±6) K for the hcp → fcc transition and (653±12) K for the fcc → hcp transition in good agreement with earlier findings. Critical-point energies are (6.7±0.3) eV for the M point in hcp cobalt and (5.6±0.3) eV for the L7 and (8.9±0.3) eV for the X7, K8 critical points in fcc cobalt, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323736
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  • 2
    Electronic Resource
    Electronic Resource
    AES and XPS characterization of SiNx layersPaper presented at ECASIA 91, 14-18 October 1991, Budapest, Hungary. (1993)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 221-227 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The properties of SiNx layers are largely influenced by their composition and the chemical state of the constituents. In the present study SiNx layers obtained by plasma-enhanced and low-pressure chemical desorption methods were characterized by AES and XPS. In the case of the most frequently applied AES characterization, the peak shape and position of the Si LVV line largely depend on the measurement parameters. In order to derive optimum conditions to minimize these effects, the energies and intensity ratios of Si LVV and N KLL peaks were examined in a wide range of AES measurement parameters: a primary electron energy of 1.0-5.0 keV and a current of 0.1-5.0 μA; sputtering conditions are: Ar+ ion energy of 0.5-3.0 keV and a current of 0.3-1.1 μA. It is clearly demonstrated that both the composition (si/N ratio) and the chemical state of silicon are affected by the applied parameters. Also, the response of the two types of layers to Ar+ ion energy showed a marked difference. As a result, optimized conditions are proposed for AES characterization. The quantitative analysis of the layers was performed by XPS. Corrected sensitivity factors for Si LVV, Si KLL and O KVV are evaluated on the basis of XPS data. It can be stated that the low-energy Si LVV peak is more sensitive to the conditions of the measuring parameters than the high-energy Si KLL peak, whereas the N KLL peak showed neither a significant energy shift nor a shape change.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740200306
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  • 3
    Electronic Resource
    Electronic Resource
    The drastic effect of oxygen on surface segregation (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 520-525 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The temperature and oxygen partial pressure of the environment of a solid may produce non-oxidizing or oxidizing conditions for any of the components in the surface. Under non-oxidizing (free surface) conditions, one of the components of a binary alloy segregates. The oxidizing effect may enhance or diminish its surface content, and the other component may even segregate. This effect is investigated here using the experimental results (ISS and AES) and theoretical calculations of a new method. Agreement between theory and experiment is shown for AuPd and CuPd, and as well for S-contaminated CuFe.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401601108
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