ISSN:
1434-1948
Keywords:
Gallium
;
Azides
;
Chemical vapour deposition
;
Gallium nitride
;
Single source precursors
;
Chemistry
;
General Chemistry
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
The synthesis, properties and X-ray single crystal structure analysis of the intramolecularly adduct-stabilised organogallium bisazide (N3)2Ga[(CH2)3NMe2] (1), the mono azide (N3)Ga[(CH2)3NMe2]2 (2) and the trialkylamine adducts of triazidogallium of the type (N3)3Ga(NR3) (3a-d; R = alkyl) are reported. An unusual isomer 1b of compound 1 is described, which was obtained by slow cooling of the analytically pure neat liquid compound 1 to 0 °C. The new and unusual structure 1b can be regarded as a weak associate of dimers linked together by head-to-tail azide bridges. In contrast, compounds 2 and 3a-b (R = CH3, C2H5) are monomeric in the solid state. The suitability of the volatile compounds 1 and 2 as single source precursors to grow GaN thin films by chemical vapour deposition is compared, showing that preferentially oriented crystalline films can be obtained from compound 2 on sapphire substrates at 600-700 °C in vacuo (0.1 Pa). However the films have a grey rather than a transparent appearance, which is presumably due to N-deficiency owing to the lower N-content of the single molecule precursor 2 relative to 1.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
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