ISSN:
1433-075X
Keywords:
Key words ZnS:Mn
;
ITO
;
Photoluminescence (PL)
;
Cathodoluminescence (CL)
;
Rapid thermal annealing (RTA)
;
Low voltage
;
Phosphors
;
Thin-films
;
Atomic layer epitaxy (ALE)
;
Electroluminescence (EL)
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract ZnS:Mn thin films were coated on transparent conducting layer indium tin oxide (ITO) 2×2 in. glass substrates by an atomic layer epitaxy process. Grazing-angle X-ray diffraction on thin films shows a phase-pure ZnS with a wurtzite structure oriented along the 002 direction. Photoluminescence and CL measurements were carried out on the films. The emission from ZnS:Mn thin films consists of two strong bands at 515 and 452 nm with an excitation band at 329 nm. For improved brightness, the samples were annealed in a rapid thermal annealing furnace under different gas atmospheres (N2, O2 and forming gas) so that the green emission was increased. The green emission is due to donar-acceptor combination. Promising results were obtained when the thin films were annealed in forming gas at 600°C for one minute. Scanning electron microscope micrographs showed that the particles are well crystallized, with a grain size of 0.3–0.5 µm. This paper reports the particle size and morphology on the luminescent characteristics of a Mn2+ center in ZnS thin films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s100190050128
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