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  • Atomic, Molecular and Optical Physics  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 56 (1995), S. 241-243 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: We study the exchange interaction in the quasi-2D antiferromagnetic high Tc superconductor parent compound La2CuO4 by all-electron, embedded cluster methods. Our material model is the cluster Cu2O11, embedded in a matrix of point charges. The SCF ground state configuration is characterized by Cu 2+ and O2- with the d-hole oriented in the [CuO2]2- plane along the Cu—O bonds. We admix to this an excited SCF configuration that has one Cu-hole transferred to the central O into the ground state configuration by nonorthogonal CI, while paying special attention to the variational balance of the singlet and triplet states. This results in a value for the exchange parameter of J = -120 meV, in good agreement with the experimental value of J = -128 meV. © 1995 John Wiley & Sons, Inc.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 45 (1993), S. 587-590 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Consider two orbital sets χk, k = 1…m and η1, 1 = 1…n, which are mutually nonorthogonal. Provided that n 〉 m, at least n - m orbitals of the set {η} can be orthogonalized to the set {χ} by a transformation within the set {η}. The orthogonalization of the remaining orbitals of {η} to the set {χ} requires a transformation in which the χk appear explicitly. The orthogonalization of one orbital set to another is relevant for SCF optimizations in a truncated basis set, in the presence of frozen occupied orbitals. Examples are frozen core calculations, ECP calculations, and embedded cluster calculations, where the cluster is embedded in a frozen environment. A simple orthogonalization scheme, which makes use of a corresponding orbital transformation, is presented. It is suggested that with a small, well-defined extension of the set {η} the complete orthogonalization can be done with a transformation in which the {χ} do not appear explicitly. © 1993 John Wiley & Sons, Inc.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 29 (1986), S. 1059-1066 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities in silicon. A Si10 cluster models the nearest Si atoms around a tetrahedral interstitial site in crystalline Si. The dangling bonds of the Si atoms are saturated by hydrogens. The effect of the Si core electrons is represented by an effective potential. Characteristic for the electronic structure of the low-lying states of the neutral, singly positive, and doubly positive ions in silicon is the presence of fairly delocalized but still predominantly transition-metal (3d)-like orbitals of t2 and e symmetry. For all ions the energy of the weighted average of the terms belonging to a configuration is lowest for the configuration with maximum occupation of the t2 orbitals. Ground states with maximum spin multiplicity are found for all ions, except Ti0.
    Additional Material: 4 Ill.
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  • 4
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 34 (1988), S. 297-308 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The application of molecular ab initio methods to investigate the electronic structure of localized impurities in semiconductors requires the study of the convergence of the results with increasing cluster size. Here we compare results for interstitial Ti in silicon, obtained with clusters of increasing size: TiSi10H16, TiSi30H40, and TiSi66H64. These clusters contain one, two, or three shells of silicon atoms, respectively, centered around Ti at a Td interstitial site. The hydrogen atoms serve as saturators of the dangling bonds. The Si core electrons are replaced by an effective potential. The calculations are based on open shell RHF theory and limited CI extensions. The charge distribution in the central part of the three clusters is very similar. In the clusters the partially occupied orbitals are much more delocalized than the 3d orbitals in the free ions. The total impurity-induced electronic charge, however, is quite localized, due to the compensating response of the Si closed shell density. Ionization of the impurity also causes a compensating response of the Si closed shells: only about 10% of the density difference is in the impurity region and the major part is behind the outermost shell of Si atoms. Transition metal associated (3d-like) excitation energies are not very dependent on the cluster size, and the relative ordering of the lowest lying states remains unchanged. Impurity associated ionization energies decrease considerably due to the extra relaxation offered by the additional shells of Si atoms. Our results indicate that a reliable description of interstitial transition metals in silicon can be provided by calculations on reasonably small clusters: Si30H40 is sufficiently large.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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