ISSN:
1432-0630
Keywords:
Ion implantation
;
Arsenic range
;
Backscattering analysis
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract MeV4He ion backscattering and differential sheet resistivity measurements were made on As implants into silicon at room temperature. Analysis of backscattering measurements yields the projected rangeR p and projected standard deviation ΔR p . Over the energy range of 50 to 250 keV, the values ofR p are found to agree well with LSS theoretical predictions; however, values of ΔR p are systematically higher than theoretical calculations. Backscattering and differential sheet resistivity measurements on samples annealed at 950°C are in general agreement and indicate diffusional broadening of the profile.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00928023
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