Publikationsdatum:
2019-07-13
Beschreibung:
The fabrication procedure and properties of 'grating' cells made by forming a fine grating pattern of aluminum alloyed into n-silicon wafers are described. The finest grating lines achieved in the cells described were 5 microns; the smallest spacing was about 15 microns. The best temperature for alloying was found to be about 600 C, a bit above the Si-Al eutectic temperature (576 C). The short-circuit current obtained from the best of these cells exposed to 100 mW/sq cm of (simulated air mass zero) illumination was at least equal to that obtained from conventional diffused cells, but their open-circuit voltage was lower. Their quantum yield was strongly blue-shifted; it was flat from 4000 to 8500 A.
Schlagwort(e):
AUXILIARY SYSTEMS
Materialart:
Photovoltaic Specialists Conference; Nov 13, 1973 - Nov 15, 1973; Palo Alto, CA
Format:
text
Permalink
