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  • 1
    Publication Date: 2011-08-17
    Description: The sum of the squares of the electronic transition moments for the A 1 Pi - X 1 Sigma + band system of SiO has been determined from absorption measurements conducted in the reflected-shock region of a shock tube. The test gas was produced by shock-heating a mixture of N2O, SiCl4, and Ar, and the spectra were recorded photographically in the 260-290-nm wavelength range. The values of the sum as a function of internuclear distance between 2.8 and 3.3 Bohr were determined by comparing the measured absorption spectrum with that produced by a line-by-line synthetic-spectrum calculation which accounted for instrumental broadening. The value of the sum so deduced at an internuclear distance of 3.0 Bohr was 1.0 + or - 0.3 atomic units.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: Journal of Quantitative Spectroscopy and Radiative Transfer; 19; Jan. 197
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  • 2
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    In:  Other Sources
    Publication Date: 2011-08-17
    Description: Curves of growth are evaluated for a spectral line broadened by the van der Waals interactions during collisions. The growth of the equivalent widths of such lines is shown to be dependent on the product of the perturber density and the 6/10 power of the van der Waals potential coefficient. When the parameter is small, the widths grow as the 1/2 power of the optical depth as they do for the Voigt profile: but when the parameter is large, they grow as 2/3 power and, hence, faster than the Voigt profile. An approximate analytical expression for the computed growth characteristics is given.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: Journal of Quantitative Spectroscopy and Radiative Transfer; 24; Oct. 198
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  • 3
    Publication Date: 2011-08-17
    Description: The sum of the squares of the electronic transition moments for the (E 1 Sigma +) - (X 1 Sigma +) band system of SiO has been determined from absorption measurements conducted in the reflected-shock region of a shock tube. The test gas produced by shock-heating a mixture of SiCl4, N2O, and Ar, and the spectra were recorded photographically in the 150-230-nm wavelength range. The values of the sum of the squares were determined by comparing the measured absorption spectra with those produced by a line-by-line synthetic spectrum calculation. The value so deduced at an r-centroid value of 3.0 bohr was 0.86 + or - 0.10 atomic unit.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: Journal of Quantitative Spectroscopy and Radiative Transfer; 20; Nov. 197
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  • 4
    Publication Date: 2011-08-17
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: Journal of Quantitative Spectroscopy and Radiative Transfer; 21; Apr. 197
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  • 5
    Publication Date: 2019-06-28
    Description: A supplement to the data relating to the calculation of nonequilibrium radiation in flight regimes of aeroassisted orbital transfer vehicles contains the listings of the computer code NEQAIR (Nonequilibrium Air Radiation), its primary input data, and explanation of the user-supplied input variables. The user-supplied input variables are the thermodynamic variables of air at a given point, i.e., number densities of various chemical species, translational temperatures of heavy particles and electrons, and vibrational temperature. These thermodynamic variables do not necessarily have to be in thermodynamic equilibrium. The code calculates emission and absorption characteristics of air under these given conditions.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: NASA-TM-86707 , REPT-85185 , NAS 1.15:86707
    Format: application/pdf
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  • 6
    Publication Date: 2019-07-13
    Description: Emission spectroscopy of shock-heated atomic silicon was performed in the spectral range 180 to 300 nm, in an environment simulating the ablation layer expected around a Jovian entry probe with a silica heat shield. From the spectra obtained at temperatures from 6000 to 10,000 K and electron number densities from 1 quadrillion to 100 quadrillion per cu cm, the Lorentzian line-widths were determined. The results showed that silicon lines are broadened significantly by both electrons (Stark broadening) and hydrogen atoms (Van der Waals broadening), and the combined line-widths are much larger than previously assumed. From the data, the Stark and the Van der Waals line-widths were determined for 34 silicon lines. Radiative transport through a typical shock layer was computed using the new line-width data. The computations showed that silicon emission in the hot region is large, but it is mostly absorbed in the colder region adjacent to the wall.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: AIAA PAPER 78-234 , Aerospace Sciences Meeting; Jan 16, 1978 - Jan 18, 1978; Huntsville, AL
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  • 7
    Publication Date: 2019-07-13
    Description: Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.
    Keywords: ATOMIC AND MOLECULAR PHYSICS
    Type: Shock tube and shock wave research; Eleventh International Symposium; Jul 11, 1977 - Jul 14, 1977; Seattle, WA
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