ISSN:
1432-0630
Keywords:
73.40.Lq
;
73.61.Le
;
85.30.Kk
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si1−x Ge x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p +/N Si1−x Ge x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 1013 cm−2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p +/N Si1−x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si1−x Ge x films are found to be slightly lower than in comparable Si films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331223
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