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Laser photochemical etching of silicon (1989)

Affrossman, S. ; Bailey, R. T. ; Cramer, C. H. ; [et al.]

Springer

Applied physics 49 (1989), S. 533-542

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ISSN: 1432-0630

Keywords: 79.20 ; 81.60 ; 82.65

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Argon laser induced chemical etching of single crystal silicon with chlorine is studied. Etch rates are determined as a function of gas pressure, crystal orientation, laser power and wavelength. Analysis of gas phase and surface products by Fourier transform IR and X-ray photoelectron spectroscopy are used to probe the reaction mechanism. Contrary to previous reports, no thermally enhanced etch rate is observed for Si (111) and the presence of oxide on the surface is found to inhibit etching even at high laser power.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00617021

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