ISSN:
1432-0630
Keywords:
68.55
;
73.60F
;
78.65J
;
81.15E
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Stoichiometric polycrystalline In2Se3 thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this α-form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323853
Permalink
