ISSN:
1432-0630
Keywords:
81.60. - j
;
79.20.Ds
;
78.55. - m
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We present a study of pattern-transfer and etch-induced damage in photon-induced cryoetching. Features with effective radii as small as ≈ 100 nm have been formed in both bulk and layered GaAs/AlGaAs materials. A measurement of the photoluminescence of etch-defined deep- submicrometer structures material suggests that this form of etching results in minimal process-induced damage. Modeling of the luminescence vs feature size for these features shows that the luminescence is limited only by carrier diffusion and non-radiative surface recombination.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01567642
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