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Frequency breakdown in semiconductors (1980)

Biswas, J. C. ; Mitra, V.

Springer

Applied physics 22 (1980), S. 95-99

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ISSN: 1432-0630

Keywords: 77.20 ; 79.20 ; 85.30

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The effect of the frequency of the applied voltage on the breakdown of semiconductors is investigated. Unlike earlier observations, our experiment yields, in some cases, a breakdown voltage versus frequency curve which is similar in nature to the high-frequency breakdown characteristics in gas devices wherein the breakdown voltage shows a minimum at a certain frequency. A possible theoretical explanation for the above behaviour of semiconductor devices based on dielectric heating is given, which is in fair agreement with the observations.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00897939

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