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  • 78.70Bj  (1)
  • Electron states  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Point-defect production in arsenic-doped silicon studied with variable-energy positrons (1989)
    Springer
    Applied physics 49 (1989), S. 335-339 
    Details
    ISSN: 1432-0630
    Keywords: 68.35.Dv ; 68.55Bd ; 78.70Bj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon epilayers grown by molecular beam epitaxy and doped in-situ using low-energy implantation were examined using a variable-energy positron beam. The samples had been previously characterized using electrical measurements, ion channeling, SIMS, and electron microscopy. The positron results show that defects have been created in layers grown at 460°C and in the highly doped layers grown at 700°C. The assignment of defect structures is difficult at present, but is consistent with the formation of As clusters or Asvacancy complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616864
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Positron systematics in annealed metals (1976)
    Springer
    Applied physics 9 (1976), S. 259-260 
    Details
    ISSN: 1432-0630
    Keywords: Positron annihilation ; Electron states
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abtract Deconvoluted Doppler-broadened annihilation energy spectra in annealed metals are fitted by a parabola and a Gaussian function whose width and intensity vary systematically with the atomic number.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900614
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    Paper (German National Licenses)
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