ISSN:
1432-0630
Keywords:
73.20.Dx
;
78.55.Cr
;
78.47.+p
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We present a phenomenological theoretical model to treat the trapping of carriers into quantum wells of semiconductor laser structures. We consider explicitely the transport within the barrier layers by solving the continuity equation with the appropriate boundary conditions taking into account surface recombination, radiative and nonradiative recombination in the barrier layers and trapping of carriers into the quantum wells. The experimental findings for the trapping dynamics in GaAs/AlGaAs quantum well structures can be consistently interpreted by the model calculations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617851
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